i-diode
Ezingxenyeni ze-elekthronikhi, idivayisi enama-electrode amabili avumela kuphela ukugeleza kwamanje ngendlela eyodwa ivame ukusetshenziselwa umsebenzi wayo wokulungisa. Futhi ama-varactor diode asetshenziswa njengama-capacitor e-electronic adjustable. Isiqondiso samanje esinama-diode amaningi ngokuvamile sibizwa ngokuthi umsebenzi "wokulungisa". Umsebenzi ovame kakhulu we-diode ukuvumela i-current ukuthi idlule endaweni eyodwa kuphela (eyaziwa ngokuthi i-forward bias), futhi iyivimbele ngokuhlehla (okwaziwa ngokuthi ukuchema okuphambene). Ngakho-ke, ama-diode angacatshangwa njengezinguqulo ze-electronic zama-valve okuhlola.
ama-diode e-electronic vacuum ekuqaleni; Kuyidivaysi ye-elekthronikhi engakwazi ukuqhuba yamanje ngendlela engaqondile. Kukhona ukuhlangana kwe-PN okunamatheminali amabili okuhola ngaphakathi kwe-semiconductor diode, futhi le divayisi ye-elekthronikhi ine-unidirectional conductivity yamanje ngokuya ngesiqondiso se-voltage esetshenzisiwe. Ngokuvamile, i-crystal diode iyisixhumi esibonakalayo se-pn esakhiwe uhlobo lwe-p-sintering kanye nama-semiconductors ohlobo lwe-n. Izendlalelo zeshaja yesikhala zakhiwe ezinhlangothini zombili zesixhumi esibonakalayo, zakha inkambu kagesi eyakhelwe yona. Uma i-voltage esetshenzisiwe ilingana noziro, amandla okusabalalisa okudalwa ukuhluka okugxilile kwabathwali bokushaja ezinhlangothini zombili ze-pn junction kanye ne-drift current ebangelwa inkambu kagesi ezakhelwe yona iyalingana futhi isesimweni sokulingana kukagesi, okuphinde kube khona. isici sama-diode ngaphansi kwezimo ezijwayelekile.
Ama-diode okuqala ahlanganisa "amakristalu e-whisker yekati" namashubhu e-vacuum (aziwa ngokuthi "amavalvu e-ionization ashisayo" e-UK). Ama-diode avame kakhulu kulezi zinsuku asebenzisa izinto zokwakha ze-semiconductor njenge-silicon noma i-germanium.

isici
Okuhle
Uma i-voltage eya phambili isetshenziswa, ekuqaleni kwesici esihamba phambili, i-voltage eya phambili incane kakhulu futhi ayanele ukunqoba umphumela wokuvimba wensimu kagesi ngaphakathi kwe-PN junction. I-front current icishe ibe nguziro, futhi lesi sigaba sibizwa ngokuthi indawo efile. I-voltage eya phambili engakwazi ukwenza i-diode conduct ibizwa ngokuthi i-dead zone voltage. Lapho i-voltage eya phambili inkulu kune-voltage yendawo efile, inkambu kagesi ngaphakathi kwe-PN junction iyanqotshwa, i-diode iqhuba ibheke phambili, futhi yamanje ikhula ngokushesha ngokunyuka kwamandla kagesi. Phakathi kwebanga elivamile lokusetshenziswa kwamanje, i-voltage yokugcina ye-diode ihlala icishe ibe njalo ngesikhathi sokuqhuba, futhi le volthi ibizwa ngokuthi i-voltage eya phambili ye-diode. Lapho i-voltage eya phambili kuyo yonke i-diode idlula inani elithile, inkambu kagesi yangaphakathi iba buthaka ngokushesha, isimo samanje sikhula ngokushesha, futhi i-diode iqhubela phambili. Ibizwa ngokuthi i-threshold voltage noma i-threshold voltage, ecishe ibe ngu-0.5V yamashubhu e-silicon futhi icishe ibe ngu-0.1V yamashubhu e-germanium. Ukwehla kwe-voltage conduction phambili ye-silicon diode cishe ku-0.6-0.8V, futhi ukwehla kwamandla kagesi okuqhuba phambili kwe-germanium diode cishe ku-0.2-0.3V.
Reverse polarity
Uma i-voltage ebuyela emuva esetshenzisiwe ingeqi ububanzi obuthile, amandla amanje adlula ku-diode ijika elijikayo elakhiwe ukunyakaza kokukhukhuleka kwabathwali abambalwa. Ngenxa yamanje encane ehlehlayo, i-diode isesimweni sokunqanyulwa. Lokhu kwamanje okubuyela emuva kwaziwa nangokuthi i-reverse saturation current noma i-leakage current, futhi i-reverse saturation current ye-diode ithintwa kakhulu izinga lokushisa. I-current reverse ye-silicon transistor evamile incane kakhulu kunaleyo ye-germanium transistor. I-reverse saturation current ye-silicon transistor enamandla aphansi ikuhlelo lwe-nA, kuyilapho leyo ye-germanium transistor enamandla aphansi ilandelana ngo-μ A. Lapho izinga lokushisa likhuphuka, isemiconductor ijatshuliswa ukushisa, inombolo abathwali abambalwa bayakhuphuka, futhi i-saturation yamanje ephambene nayo iyanda ngokufanele.

ukwehlukana
Lapho i-voltage ye-reverse esetshenzisiwe idlula inani elithile, i-reverse current izokhuphuka ngokuzumayo, okubizwa ngokuthi ukuwohloka kukagesi. I-voltage ebalulekile ebangela ukuphuka kukagesi ibizwa ngokuthi i-diode reverse breakdown voltage. Uma kwenzeka ukuwohloka kukagesi, i-diode ilahlekelwa ukuqhutshwa kwayo okungaqondile. Uma i-diode ingashisi ngokweqile ngenxa yokuwohloka kukagesi, ukuqhutshwa kwayo kwe-unidirectional kungase kungabhubhi unomphela. Ukusebenza kwayo kusengabuyiselwa ngemuva kokukhipha i-voltage esetshenzisiwe, ngaphandle kwalokho i-diode izolimala. Ngakho-ke, i-voltage ehlanekezayo eyeqile esetshenziswa ku-diode kufanele igwenywe ngesikhathi sokusetshenziswa.
I-diode iyisisetshenziswa esibulalayo esine-unidirectional conductivity, engahlukaniswa ngama-diode kagesi nama-crystal diode. Ama-electronic diode asebenza kahle kakhulu kune-crystal diode ngenxa yokulahlekelwa ukushisa kwe-filament, ngakho-ke awavamile ukubonakala. Ama-crystal diode ajwayelekile futhi asetshenziswa kakhulu. I-unidirectional conductivity yama-diode isetshenziswa cishe kuzo zonke izifunda ze-elekthronikhi, futhi ama-semiconductor diode adlala indima ebalulekile kumasekethe amaningi. Zingezinye zemishini yokuqala ye-semiconductor futhi zinezinhlobonhlobo zezinhlelo zokusebenza.
Ukwehla kwamandla kagesi aya phambili kwe-silicon diode (uhlobo olungakhanyisi) ngu-0.7V, kuyilapho ukwehla kwamandla kagesi aya phambili kwe-germanium diode kungu-0.3V. Ukwehla kwe-voltage eya phambili ye-diode ekhipha ukukhanya kuyahlukahluka ngemibala ekhanyayo ehlukahlukene. Ngokuyinhloko kunemibala emithathu, futhi amanani ereferensi athile okwehla kwamandla kagesi alandelayo: ukwehla kwamandla kagesi wama-diode akhipha ukukhanya okubomvu ngu-2.0-2.2V, ukwehla kwamandla kagesi kuma-diode aphuzi akhipha ukukhanya ngu-1.8-2.0V, kanye nogesi ukwehla kwe-green light-emitting diode kungu-3.0-3.2V. Isilinganiso samanje ngesikhathi sokukhishwa kokukhanya okuvamile singama-20mA.
I-voltage ne-current ye-diode ayihlobene ngokulandelana, ngakho-ke lapho uxhuma ama-diode ahlukene ngokuhambisana, ama-resistors afanelekile kufanele axhunywe.

ijika lesici
Njengama-PN junctions, ama-diode ane-unidirectional conductivity. Ijika elijwayelekile le-volt ampere yesici se-silicon diode. Uma i-voltage eya phambili isetshenziswa ku-diode, yamanje incane kakhulu lapho inani le-voltage liphansi; Lapho i-voltage idlula i-0.6V, i-current iqala ukwanda ngokuqhubekayo, okuvame ukubizwa ngokuthi i-voltage yokuvula i-diode; Lapho i-voltage ifinyelela cishe ku-0.7V, i-diode isesimweni sokuqhuba ngokugcwele, ngokuvamile esibizwa ngokuthi i-voltage conduction ye-diode, emelwe uphawu lwe-UD.
Kuma-germanium diode, i-voltage evulayo ingu-0.2V kanti i-condution voltage UD icishe ibe ngu-0.3V. Uma i-voltage ehlehlayo isetshenziswa ku-diode, yamanje incane kakhulu lapho inani lamandla kagesi liphansi, futhi inani layo lamanje i-reverse saturation current IS. Lapho i-voltage ebuyela emuva idlula inani elithile, i-current iqala ukwanda kakhulu, okubizwa ngokuthi i-reverse breakdown. Le voltage ibizwa ngokuthi i-reverse breakdown voltage ye-diode futhi imelelwa uphawu lwe-UBR. Amanani e-voltage ehlukanayo e-UBR ezinhlobo ezahlukene zama-diode ayahluka kakhulu, kusukela kumashumi ama-volts ukuya kuma-volts ayizinkulungwane ezimbalwa.

Ukuhlehla ukuhlukana
Ukuhlukaniswa kwe-Zener
Ukuhlehla okuhlehlayo kungahlukaniswa ngezinhlobo ezimbili ngokusekelwe kumshini: Ukuhlukaniswa kwe-Zener nokuhlukaniswa kwe-Avalanche. Endabeni yokugxiliswa kwe-doping ephezulu, ngenxa yobubanzi obuncane besifunda esivimbelayo kanye namandla kagesi amakhulu abuyela emuva, isakhiwo sebhondi esiqinile endaweni yokuvimbela siyabhujiswa, okubangela ukuthi ama-electron e-valence agqashuke kumabhondi aqinile futhi akhiqize amapheya embobo yama-electron, okuholela ekwandeni okubukhali kwamandla. Lokhu kuhlukaniswa kubizwa ngokuthi i-Zener breakdown. Uma ukugxiliswa kwe-doping kuphansi futhi ububanzi bendawo yokuvimbela bubanzi, akulula ukubangela ukuphuka kwe-Zener.

Ukuqhekeka kwe-avalanche
Olunye uhlobo lokuwohloka ukuwohloka kwe-avalanche. Lapho i-voltage ehlehlayo ikhuphukela enanini elikhulu, inkambu kagesi esetshenziswayo isheshisa isivinini se-electron drift, ibangele ukushayisana nama-electron e-valence kubhondi ehlangene, iwakhiphe kubhondi eqinile futhi ikhiqize amapheya embobo yama-electron amasha. Izimbobo zama-electron ezisanda kukhiqizwa zisheshiswa inkambu kagesi futhi zingqubuzane namanye ama-electron e-valence, okubangela i-avalanche njengokukhuphuka kwezithwali zokushaja kanye nokwanda okubukhali kwamandla. Lolu hlobo lokuqhekeka lubizwa ngokuthi i-avalanche breakdown. Kungakhathalekile ukuthi hlobo luni lokuqhekeka, uma okwamanje kungakhawulelwe, kungabangela umonakalo unomphela ku-PN junction.